IRFZ BVDSS = 60 V. RDS(on) = Ω. ID = 50 A. ± . .. Obsolete. This datasheet contains the design specifications for. IRFZ44 Transistor Datasheet, IRFZ44 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. Advanced HEXFET® Power MOSFETs from International. Rectifier utilize advanced processing techniques to achieve extremely low.
|Published (Last):||14 May 2018|
|PDF File Size:||9.85 Mb|
|ePub File Size:||12.48 Mb|
|Price:||Free* [*Free Regsitration Required]|
I couldn’t find anything at 0Hz linear operation. So to answer my own question This also means the SOA curves in the datasheet are probably not all correct. Yes, a MOSFET will go into thermal runaway if the gate-source voltage is below the zero-temperature-coefficient threshold.
Well, the mosfet died. Infineon document on thermal instability.
IRFZ44 MOSFET. Datasheet pdf. Equivalent
Sign up using Email and Password.
Can you please link the datasheet? Home Questions Tags Users Unanswered.
IRFZ44 MOSFET Datasheet pdf – Equivalent. Cross Reference Search
Email Required, but never shown. Any idea what the max current might be at 30V and 40V so as not to cause damage? This isn’t some theoretical annoyance that doesn’t really happen. I tested today at The electronic load does work badly smoothed 40V DC 3A.
IRFZ44, SiHFZ44 product information
Tony EE rocketscientist 62k 2 21 The IRFZ44N datashest a hexFET lrfz44 for switching applications so using it in linear applications runs a risk of destroying it and you being left scratching your head as to why it went pop.
It might not even be very warm at all. Andy aka k 10 Otherwise, I may have to change it all to a 2N and make a mess.
Damage could be caused by overheat in your case DC load. The continuous current is when the mosfet is fully on. It’s made with a pulse to prevent self-heating and irfz444 remotest possibility of thermal runaway at lower gate voltages; note how a gate voltage of 4.
It should probably tolerate a lot if the Vds is limited to only about 10V. VGS must be greater than 4V to lower Ron.
Vishay – IRFZ44, SiHFZ44 – Power MOSFET
On semi document on thermal instability Infineon document on thermal instability Ditto from Fairchild Nasa document explaining it Which figure? Chupacabras 3, 2 11 So that probably explains the missing dc line in the SOA curve.
Sign up using Facebook. This one failed with only 2. So, they too may in reality be curving downwards much more at higher voltages i. Seems to hold up well. Post as a guest Name. Did you not understand my answer with Temp rise? I can vouch for seeing it on a design I was asked to look at. In hindsight, I should have added a couple of resisters upstream of the drain to lower the voltage across the mosfet. Within about a milli second, a hot spot can develop in the hexfet and a localized temperature of over centigrade results and blows a hole in it before the feedback loop can respond.
You have to work with power dissipation figures.
Added on APR I have built an electronic load. However, I have tested it a lot at V and 1A. At the time I did not understand the SOA curves. Extrapolating the points where the mosfet worked and did not work the imaginary DC operation line does not give me a line parallel to the other lines at difference pulse widths.
Nasa document explaining it. Indraneel 1, 4 Expecting reliability at any more than 30W even with excellent cooling is unrealistic. I have tested it only for few seconds at this power. It is huge difference between 3A 40V and 3A 5V. This mosfet will fail at above 2A at all voltages below 20V. Figure 1 and figure 2 datasheeg the DC operations despite this measurement being made with a 20 us pulse: